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MITSUBISHI TRANSISTOR MODULES
QM30DY-24
MEDIUM POWER SWITCHING USE
INSULATED TYPE
QM30DY-24
* * * * *
IC Collector current .......................... 30A VCEX Collector-emitter voltage ......... 1200V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271
APPLICATION AC motor controllers, UPS, CVCF, DC motor controllers, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
94 (7) 23 23 80 23 6.5
B2 E2
(7) B2 E2 C1 C2E1 E2
10.5 13 10.5
34
C2E1
E2
C1 12
E1 B1
M5
Tab#110, t=0.5
E1 B1
31
LABEL
(8)
22.5
6.5
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM30DY-24
MEDIUM POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage
(Tj=25C, unless otherwise noted)
Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 1200 1200 1200 7 30 30 300 2 300 -40~+150 -40~+125 Charged part to case, AC for 1 minute Main terminal screw M5 2500 1.47~1.96 15~20 1.96~2.94 20~30 210 Unit V V V V A A W A A C C V N*m kg*cm N*m kg*cm g
--
Mounting torque Mounting screw M6
--
Weight
Typical value
ELECTRICAL CHARACTERISTICS
Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain
(Tj=25C, unless otherwise noted)
Limits Test conditions VCE=1200V, VEB=2V VCB=1200V, Emitter open VEB=7V IC=30A, IB=0.6A -IC=30A (diode forward voltage) IC=30A, VCE=5V Min. -- -- -- -- -- -- 75 -- VCC=600V, IC=30A, IB1=-IB2=0.6A -- -- Transistor part (per 1/2 module) Diode part (per 1/2 module) Conductive grease applied (per 1/2 module) -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 1.0 1.0 200 3.0 3.5 1.8 -- 2.5 15 3.0 0.4 1.5 0.15 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM30DY-24
MEDIUM POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL)
50 Tj=25C 3 2 IB=1.0A IB=0.6A 30 IB=0.4A 20 IB=0.2A IB=0.1A 10 Tj=25C Tj=125C VCE=5.0V
DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL)
COLLECTOR CURRENT IC (A)
DC CURRENT GAIN hFE
40
10 3 7 5 4 3 2 10 2 7 5 4 3 10 0
0
0
1
2
3
4
5
2 3 4 5 7 10 1
2 3 4 5 7 10 2
COLLECTOR-EMITTER VOLTAGE
VCE (V)
COLLECTOR CURRENT IC (A)
VCE (sat), VBE (sat) (V)
COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL)
10 1 7 Tj=25C 5 VCE=2.8V 4 3 2 10 0 7 5 4 3 2 10 -1 1.4 1.8 2.2 2.6 3.0 3.4
SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
101 7 5 4 3 2 10 0 7 5 4 3 2
BASE CURRENT IB (A)
VBE(sat)
SATURATION VOLTAGE
VCE(sat)
10 -1 10 0
Tj=25C Tj=125C IB=0.6A 2 3 4 5 7 10 1 2 3 4 5 7 10 2
BASE-EMITTER VOLTAGE
VBE (V)
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V)
5 3
SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL)
ton, ts, tf (s)
2 10 1 7 5 4 3 2
ts
4
3
2
IC=30A IC=20A IC=10A
SWITCHING TIME
Tj=25C Tj=125C VCC=600V IB1=-IB2=0.6A ton tf
1
Tj=25C Tj=125C 0 10 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0 2 3 4 5 7 10 1
10 0 7 5 4 3 10 0
2 3 4 5 7 10 1
2 3 4 5 7 10 2
BASE CURRENT IB (A)
COLLECTOR CURRENT
IC (A)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM30DY-24
MEDIUM POWER SWITCHING USE
INSULATED TYPE
SWITCHING TIME VS. BASE CURRENT (TYPICAL)
3
REVERSE BIAS SAFE OPERATING AREA
80
SWITCHING TIME
10 1 7 5 4 3 2 10 0
COLLECTOR CURRENT IC (A)
2
ts, tf (s)
ts
Tj=125C
70 60 50 40 30 20 10 0 0 200 400 600 800 1000 1200 1400 1600 IB2=-1A
tf
Tj=25C Tj=125C 7 VCC=600V 5 IB1=0.6A 4 IC=30A 3 10 -1 2 3 4 5 7 10 0
2 3 4 5 7 10 1
BASE REVERSE CURRENT -IB2 (A)
COLLECTOR-EMITTER VOLTAGE
VCE (V)
FORWARD BIAS SAFE OPERATING AREA
10 2 7 5 3 2 10 1 7 5 3 2 100
1m
DERATING FACTOR OF F. B. S. O. A.
COLLECTOR CURRENT IC (A)
90
S
DERATING FACTOR (%)
80 70 60 50 40 30 20 10 0 0 20 40 60 COLLECTOR DISSIPATION
SECOND BREAKDOWN AREA
100 S
200 S
10 0 7 5 3 TC=25C 2 NON REPETITIVE 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3
COLLECTOR-EMITTER VOLTAGE
COLLECTOR REVERSE CURRENT -IC (A)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 45 710 1 2 3 4 5 0.5
0.4
D C
50
S
80 100 120 140 160
VCE (V)
CASE TEMPERATURE
TC (C)
Zth (j-c) (C/ W)
10 7 5 4 3 2 10 1 7 5 4 3 2
REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) 2
0.3
0.2
0.1 0 10 -3 2 3 4 5 710 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0
Tj=25C Tj=125C 0.8 1.2 1.6 2.0 2.4
10 0 0.4
TIME (s)
COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM30DY-24
MEDIUM POWER SWITCHING USE
INSULATED TYPE
RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) 500
REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 2 7 5 3 2 Irr (A), Qrr (c) 10 1 7 5 3 2 Irr 10 2 Tj=25C Tj=125C
400
10 1 trr (s)
300
200
100
0 10 0
2 3 4 5 7 10 1
2 3 4 5 7 10 2
10 0 Qrr 10 0 7 5 3 VCC=600V trr 2 IB1=-IB2=0.6A -1 10 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 FORWARD CURRENT IF (A)
CONDUCTION TIME (CYCLES AT 60Hz)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE ) 10 0 2 3 4 5 7 10 1 2 3 4 5 7 2.0 1.6 Zth (j-c) (C/ W)
1.2
0.8
0.4 0 10 -3 2 3 4 5 710 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0 TIME (s)
Feb.1999

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